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| APT10040B2VFR APT10040LVFR 1000V 25A 0.400W POWER MOS V (R) FREDFET B2VFR Power MOS V(R) is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V(R) also achieves faster switching speeds through optimized gate layout. T-MAXTM TO-264 LVFR * Identical Specifications: T-MAXTM or TO-264 Package * Lower Leakage * Fast Recovery Body Diode MAXIMUM RATINGS Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter D G S * Faster Switching * 100% Avalanche Tested All Ratings: TC = 25C unless otherwise specified. APT10040 UNIT Volts Amps Drain-Source Voltage Continuous Drain Current @ TC = 25C Pulsed Drain Current 1 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current 1 Repetitive Avalanche Energy Single Pulse Avalanche Energy AL IC HN EC ON TI ED AT NC RM VA FO AD IN 1000 25 100 30 40 625 5.0 -55 to 150 300 33 50 (Repetitive and Non-Repetitive) 1 4 Volts Watts W/C C Amps mJ 3000 STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS ID(on) RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250A) On State Drain Current 2 MIN TYP MAX UNIT Volts Amps 1000 25 0.40 250 1000 100 2 4 (VDS > I D(on) x R DS(on) Max, VGS = 10V) 2 Drain-Source On-State Resistance (VGS = 10V, 0.5 ID[Cont.]) Ohms A nA Volts rev- 12-99 050-5908 Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125C) Gate-Source Leakage Current (VGS = 30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 2.5mA) APT Website - http://www.advancedpower.com CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. USA EUROPE 405 S.W. Columbia Street Chemin de Magret Bend, Oregon 97702 -1035 F-33700 Merignac - France Phone: (541) 382-8028 Phone: (33) 5 57 92 15 15 FAX: (541) 388-0364 FAX: (33) 5 56 47 97 61 DYNAMIC CHARACTERISTICS Symbol Ciss Coss Crss Qg Qgs Qgd t d(on) tr t d(off) tf Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge 3 APT10040 B2VFR - LVFR Test Conditions VGS = 0V VDS = 25V f = 1 MHz VGS = 10V VDD = 0.5 VDSS VGS = 15V MIN TYP MAX UNIT pF 7700 690 330 380 33 196 18 14 66 9 nC Gate-Source Charge Turn-on Delay Time Rise Time Gate-Drain ("Miller") Charge Turn-off Delay Time Fall Time SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol IS ISM VSD dv/ dt Characteristic / Test Conditions Pulsed Source Current 1 Continuous Source Current (Body Diode) (Body Diode) 5 Diode Forward Voltage Peak Diode Recovery t rr Q rr IRRM Reverse Recovery Time (IS = -ID [Cont.], di/dt = 100A/s) Reverse Recovery Charge (IS = -ID [Cont.], di/dt = 100A/s) Peak Recovery Current (IS = -ID [Cont.], di/dt = 100A/s) AL IC HN EC ON TI ED AT NC RM VA FO AD IN ID = ID [Cont.] @ 25C VDD = 0.5 VDSS RG = 0.6W ID = ID [Cont.] @ 25C MIN TYP 2 ns MAX UNIT Amps Volts V/ns ns 25 100 1.3 5 (VGS = 0V, IS = -ID [Cont.]) dv/ dt Tj = 25C Tj = 25C 320 650 Tj = 125C 1.9 5.4 13 21 Tj = 125C Tj = 25C Tj = 125C C Amps THERMAL CHARACTERISTICS Symbol RqJC RqJA Characteristic Junction to Case Junction to Ambient MIN TYP MAX UNIT C/W 0.20 40 3 See MIL-STD-750 Method 3471 4 Starting T = +25C, L = 9.60mH, R = 25W, Peak I = 25A j G L 5 I -I [Cont.], di/ = 100A/s, T 150C, R = 2.0W, V = 200V. S D j G R dt 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 Pulse Test: Pulse width < 380 S, Duty Cycle < 2% APT Reserves the right to change, without notice, the specifications and information contained herein. T-MAXTM (B2) Package Outline 4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244) TO-264 (L) Package Outline 4.60 (.181) 5.21 (.205) 1.80 (.071) 2.01 (.079) 19.51 (.768) 20.50 (.807) 3.10 (.122) 3.48 (.137) 5.79 (.228) 6.20 (.244) Collector Collector 20.80 (.819) 21.46 (.845) 25.48 (1.003) 26.49 (1.043) 4.50 (.177) Max. 0.40 (.016) 0.79 (.031) 19.81 (.780) 20.32 (.800) 2.87 (.113) 3.12 (.123) 1.65 (.065) 2.13 (.084) 2.29 (.090) 2.69 (.106) 19.81 (.780) 21.39 (.842) 2.29 (.090) 2.69 (.106) rev- 12-99 1.01 (.040) 1.40 (.055) 2.21 (.087) 2.59 (.102) 5.45 (.215) BSC 2-Plcs. Gate Collector Emitter Gate Collector Emitter 0.48 (.019) 0.76 (.030) 0.84 (.033) 1.30 (.051) 2.79 (.110) 2.59 (.102) 3.18 (.125) 3.00 (.118) 5.45 (.215) BSC 2-Plcs. 050-5908 These dimensions are equal to the TO-247 without the mounting hole. Dimensions in Millimeters and (Inches) Dimensions in Millimeters and (Inches) APT's devices are covered by one or more of the following U.S.patents: 4,895,810 5,256,583 5,045,903 4,748,103 5,089,434 5,283,202 5,182,234 5,231,474 5,019,522 5,434,095 5,262,336 5,528,058 |
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